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Monte Carlo Simulation of the Semimetal-Insulator Phase Transition in Monolayer Graphene

机译:半导体 - 绝缘体相变的monte Carlo模拟   单层石墨烯

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摘要

A 2+1 dimensional fermion field theory is proposed as a model for thelow-energy electronic excitations in monolayer graphene. The model consists ofN=2 four-component Dirac fermions moving in the plane and interacting via acontact interaction between charge densities. For strong couplings there is acontinuous transition to a Mott insulting phase. We present results of anextensive numerical study of the model's critical region, including the orderparameter, its associated susceptibility, and for the first time thequasiparticle propagator. The data enables an extraction of the criticalexponents at the transition, including the dynamical critical exponent, whichare hypothesised to be universal features of a quantum critical point. Therelation of our model with others in the literature is discussed, along withthe implications for physical graphene following from our value of the criticalcoupling.
机译:提出了2 + 1维费米子场理论作为单层石墨烯中低能电子激发的模型。该模型由N = 2个四组分狄拉克费米子组成,它们在平面中移动并通过电荷密度之间的接触相互作用而相互作用。对于强耦合,需要连续过渡到莫特绝缘阶段。我们介绍了对该模型的关键区域进行的广泛数值研究的结果,其中包括阶次参数,其相关的磁化率以及首次的准粒子传播器。该数据能够提取过渡时的临界指数,包括动态临界指数,这些假设被认为是量子临界点的通用特征。从临界耦合的价值出发,我们讨论了我们的模型与文献中其他模型之间的关系,以及对物理石墨烯的影响。

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